Samsung intros 4Gb LPDDR3 mobile DRAM

Samsung Electronics has announced what it boasts as the industry's first production of ultra-high-speed 4Gb low power double data rate 3 (LPDDR3) mobile DRAM that is being produced at a 20nm class process node. According to the company, the 4Gb LPDDR3 mobile DRAM enables performance levels comparable to the standard DRAM used in PCs, making it ideal for demanding multimedia-intensive features on next-generation mobile devices such as high-performance smartphones and tablets.

The 4Gb LPDDR3 can transmit data at up to 2,133Mb/s per pin, which is more than double the performance of the preceding memory standard mobile DRAM (LPDDR2) with a data transmission speed of 800Mb/s. This makes it possible to transmit three full HD videos, collectively 17GBs in length, in one second over the latest Samsung chip embedded in a mobile device.

Samsung's 20nm-class LPDDR3 mobile DRAM enables seamless display of full HD video on smartphones with 5in-or-larger screens. In comparison to a 30nm-class LPDDR3 DRAM, the device claims to generate more than a 30 per cent improvement in performance and 20 per cent savings in power consumption.

While mobile gadgets continue to scale down in height, battery packs have been increasing in size. By adopting Samsung's 4Gb LPDDR3 mobile DRAM, OEMs can have a 2GB package that includes four of Samsung's chips in a single package that meets the memory package height of 0.8mm.

Samsung plans to increase production of its advanced 20nm-class mobile DRAM later this year, solidifying its competitiveness as a memory industry leader.

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